High-power single-mode 2.0 μm laser diodes
Identifieur interne : 020007 ( Main/Repository ); précédent : 020006; suivant : 020008High-power single-mode 2.0 μm laser diodes
Auteurs : RBID : Pascal:94-0355968Descripteurs français
- Pascal (Inist)
- Diode laser, Laser monomode, Puits quantique, Laser puissance, Puissance sortie, Etude expérimentale, Matériau semiconducteur, Champ lointain, Composé ternaire, Composé quaternaire, Indium arséniure, Gallium arséniure, Gallium phosphure, Indium phosphure, Phosphoarséniure, 4255P, InGaAs, As Ga In, InGaAsP, As Ga In P.
English descriptors
- KwdEn :
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 01E991
Links to Exploration step
Pascal:94-0355968Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">High-power single-mode 2.0 μm laser diodes</title>
<author><name sortKey="Major, J S Jr" uniqKey="Major J">J. S. Jr Major</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>SDL Inc.</s1>
<s2>San Jose CA 95134</s2>
<s3>USA</s3>
</inist:fA14>
<country>États-Unis</country>
<placeName><region type="state">Dakota du Sud</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Nam, D W" uniqKey="Nam D">D. W. Nam</name>
</author>
<author><name sortKey="Osinski, J S" uniqKey="Osinski J">J. S. Osinski</name>
</author>
<author><name sortKey="Welch, D F" uniqKey="Welch D">D. F. Welch</name>
</author>
</titleStmt>
<publicationStmt><idno type="inist">94-0355968</idno>
<date when="1993">1993</date>
<idno type="stanalyst">PASCAL 94-0355968 INIST</idno>
<idno type="RBID">Pascal:94-0355968</idno>
<idno type="wicri:Area/Main/Corpus">01E991</idno>
<idno type="wicri:Area/Main/Repository">020007</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">1041-1135</idno>
<title level="j" type="abbreviated">IEEE photonics technol. lett.</title>
<title level="j" type="main">IEEE photonics technology letters</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Arsenides phosphides</term>
<term>Experimental study</term>
<term>Far field</term>
<term>Gallium arsenides</term>
<term>Gallium phosphides</term>
<term>High-power lasers</term>
<term>Indium arsenides</term>
<term>Indium phosphides</term>
<term>Laser diodes</term>
<term>Output power</term>
<term>Quantum wells</term>
<term>Quaternary compounds</term>
<term>Semiconductor materials</term>
<term>Single mode laser</term>
<term>Ternary compounds</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Diode laser</term>
<term>Laser monomode</term>
<term>Puits quantique</term>
<term>Laser puissance</term>
<term>Puissance sortie</term>
<term>Etude expérimentale</term>
<term>Matériau semiconducteur</term>
<term>Champ lointain</term>
<term>Composé ternaire</term>
<term>Composé quaternaire</term>
<term>Indium arséniure</term>
<term>Gallium arséniure</term>
<term>Gallium phosphure</term>
<term>Indium phosphure</term>
<term>Phosphoarséniure</term>
<term>4255P</term>
<term>InGaAs</term>
<term>As Ga In</term>
<term>InGaAsP</term>
<term>As Ga In P</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1041-1135</s0>
</fA01>
<fA03 i2="1"><s0>IEEE photonics technol. lett.</s0>
</fA03>
<fA05><s2>5</s2>
</fA05>
<fA06><s2>7</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>High-power single-mode 2.0 μm laser diodes</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>MAJOR (J. S. JR)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>NAM (D. W.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>OSINSKI (J. S.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>WELCH (D. F.)</s1>
</fA11>
<fA14 i1="01"><s1>SDL Inc.</s1>
<s2>San Jose CA 95134</s2>
<s3>USA</s3>
</fA14>
<fA20><s1>733-734</s1>
</fA20>
<fA21><s1>1993</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>21972</s2>
<s5>354000035514480010</s5>
</fA43>
<fA44><s0>0000</s0>
</fA44>
<fA45><s0>7 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>94-0355968</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>IEEE photonics technology letters</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC02 i1="01" i2="3"><s0>001B40B55P</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Diode laser</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Laser diodes</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Laser monomode</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Single mode laser</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Laser monomodo</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Puits quantique</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Quantum wells</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Laser puissance</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>High-power lasers</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Puissance sortie</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Output power</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Potencia salida</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Etude expérimentale</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Experimental study</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Matériau semiconducteur</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Semiconductor materials</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Champ lointain</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Far field</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="GER"><s0>Fernfeld</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Campo lejano</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Composé ternaire</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Ternary compounds</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Composé quaternaire</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Quaternary compounds</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Indium arséniure</s0>
<s2>NK</s2>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Gallium arséniure</s0>
<s2>NK</s2>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Gallium phosphure</s0>
<s2>NK</s2>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Gallium phosphides</s0>
<s2>NK</s2>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Indium phosphure</s0>
<s2>NK</s2>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Indium phosphides</s0>
<s2>NK</s2>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Phosphoarséniure</s0>
<s2>NA</s2>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Arsenides phosphides</s0>
<s2>NA</s2>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Fosfoarseniuro</s0>
<s2>NA</s2>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>4255P</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>InGaAs</s0>
<s4>INC</s4>
<s5>92</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>As Ga In</s0>
<s4>INC</s4>
<s5>93</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>InGaAsP</s0>
<s4>INC</s4>
<s5>94</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>As Ga In P</s0>
<s4>INC</s4>
<s5>95</s5>
</fC03>
<fN21><s1>173</s1>
</fN21>
<fN82><s1>NBS</s1>
</fN82>
</pA>
</standard>
</inist>
</record>
Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 020007 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 020007 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien |wiki= *** parameter Area/wikiCode missing *** |area= IndiumV3 |flux= Main |étape= Repository |type= RBID |clé= Pascal:94-0355968 |texte= High-power single-mode 2.0 μm laser diodes }}
This area was generated with Dilib version V0.5.77. |